The effect of the post-growth annealing on the electroluminescence properties of n-ZnO nanorods/p-GaN light emitting diodes
- 30 June 2010
- journal article
- Published by Elsevier BV in Superlattices and Microstructures
- Vol. 47 (6), 754-761
- https://doi.org/10.1016/j.spmi.2010.03.002
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasersNanotechnology, 2009
- Fabrication of ZnO nanorod-based p–n heterojunction on SiC substrateSuperlattices and Microstructures, 2007
- ZnO: From basics towards applicationsPhysica Status Solidi (b), 2007
- Defect emissions in ZnO nanostructuresNanotechnology, 2007
- Defects in ZnO Nanorods Prepared by a Hydrothermal MethodThe Journal of Physical Chemistry B, 2006
- General Route to Vertical ZnO Nanowire Arrays Using Textured ZnO SeedsNano Letters, 2005
- Nanostructures of zinc oxideMaterials Today, 2004
- Photoluminescence studies of undoped and nitrogen-doped ZnO layers grown by plasma-assisted epitaxyJournal of Crystal Growth, 2004
- Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layerJournal of Applied Physics, 2003
- Purpose-Built Anisotropic Metal Oxide Material: 3D Highly Oriented Microrod Array of ZnOThe Journal of Physical Chemistry B, 2001