Electronic and Optoelectronic Devices based on Two‐Dimensional Materials: From Fabrication to Application
- 31 January 2017
- journal article
- review article
- Published by Wiley in Advanced Electronic Materials
- Vol. 3 (4)
- https://doi.org/10.1002/aelm.201600364
Abstract
No abstract availableKeywords
Funding Information
- National Research Foundation of Korea (2015R1A2A2A01002965)
- Ministry of Science ICT and Future Planning
This publication has 178 references indexed in Scilit:
- Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene ElectrodesSmall, 2013
- Breakdown of High-Performance Monolayer MoS2 TransistorsACS Nano, 2012
- Control of Electronic Structure of Graphene by Various Dopants and Their Effects on a NanogeneratorJournal of the American Chemical Society, 2010
- Contact Resistance for “End-Contacted” Metal−Graphene and Metal−Nanotube Interfaces from Quantum MechanicsThe Journal of Physical Chemistry C, 2010
- Work Function Engineering of Graphene ElectrodeviaChemical DopingACS Nano, 2010
- Emerging Photoluminescence in Monolayer MoS2Nano Letters, 2010
- Photo-Thermoelectric Effect at a Graphene Interface JunctionNano Letters, 2009
- Dielectric Screening Enhanced Performance in Graphene FETNano Letters, 2009
- Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical PropertiesNano Letters, 2009
- A 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drainSuperlattices and Microstructures, 2000