Cooperative growth phenomena in silicon/germanium low-temperature epitaxy
- 19 December 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (25), 2555-2557
- https://doi.org/10.1063/1.100206
Abstract
A series of Si:Ge alloys and structures has been prepared by ultrahigh-vacuum chemical vapor deposition. Alloys of composition 0≤Ge/Si≤0.20 are readily deposited at T=550 °C. Commensurate, defect-free strained layers are deposited up to a critical thickness, whereupon the accumulated stress in the films is accommodated by the formation of dislocation networks in the substrate wafers. A cooperative growth phenomenon is observed where the addition of 10% germane to the gaseous deposition source accelerates silane’s heterogeneous reaction rate by a factor of 25. A model is proposed where Ge acts as a desorption center for mobile hydrogen adatoms on the Si[100] surface, accelerating heterogeneous silane pyrolysis by the enhanced availability of chemisorption sites.This publication has 9 references indexed in Scilit:
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