Silicon Etching in HNO[sub 3]/HF Solution: Charge Balance for the Oxidation Reaction

Abstract

The potential dependence of the current and the etch rate of p‐ and n‐type silicon electrodes in solution was investigated. Hydrogen evolved during etching at the open‐circuit potential was also measured. These results give insight into the different processes occurring during etching. A detailed charge balance for silicon oxidation in the etchant is deduced. ©1999 The Electrochemical Society