Edge Couplers With Relaxed Alignment Tolerance for Pick-and-Place Hybrid Integration of III–V Lasers With SOI Waveguides
Open Access
- 13 December 2013
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 20 (4), 369-379
- https://doi.org/10.1109/jstqe.2013.2292523
Abstract
We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve high coupling efficiencies and are suitable for passively aligned assembly with pick-and-place tools. Light is coupled to two on-chip single mode SOI waveguides with almost identical power coupling efficiency, but with a varying relative phase accommodating the lateral misalignment between the laser diode and the coupling devices, and is suitable for the implementation of parallel optics transmitters. Experimental characterization with both a lensed fiber and a Fabry-Pérot semiconductor laser diode has been performed. Excess insertion losses (in addition to the 3 dB splitting) taken as the worst case over both waveguides of respectively 2 ± 0.3 dB and 3.1 ± 0.3 dB, as well as excellent 1 dB loss placement tolerance range of respectively 2.8 μm and 3.8 μm (worst case over both in-plane axes) have been measured for the two devices. Back-reflections to the laser are below -20 dB for both devices within the 1 dB misalignment range. Devices were fabricated with 193 nm DUV optical lithography and are compatible with mass-manufacturing with mainstream CMOS technology.Keywords
Funding Information
- European Research Council (ERC FP7/2011¿2016 279770)
- European Commission's Seventh Framework Programme (CIG FP7/2011¿2015 293767)
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