Methods of avoiding edge effects on semiconductor diodes

Abstract

The importance of diode edge effects in practical semiconductor devices and in test structures for electrophysical investigations, is discussed. Included in the review are power devices, devices utilising avalanche effects, and radiation detectors. The main effects are on reverse characteristics, introducing premature breakdown or excess currents. The discussion starts with experiments clarifying the role of field distribution and surface treatment of the edge, and the application of simple methods of improvement, such as using overlay electrodes or surface protection.