Generation of misfit dislocations in semiconductors
- 1 December 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (11), 4413-4420
- https://doi.org/10.1063/1.339078
Abstract
The acting slip mechanism for the generation of misfit dislocations in diamond-type–semiconductor heterostructures is investigated with transmission electron microscopy. It is shown that dissociation of the 60°-mixed dislocations can lead to a difference in strain accommodation for tensile and compressive strain. A strain/thickness relation is obtained from the energy expression for nucleation of half-loops. This relation is compared with other theoretical relations and with experimental strain data for Si/GaP(001) and In0.07Ga0.93As/GaAs(001) , measured with transmission electron microscopy and ion blocking.Keywords
This publication has 25 references indexed in Scilit:
- Lattice relaxation of InAs heteroepitaxy on GaAsJournal of Crystal Growth, 1987
- Transition from the Pseudomorphic State to the Nonregistered State in Epitaxial Growth of Au on Pd(111)Physical Review Letters, 1983
- On the Core Structure of the Glide‐Set 90° and 30° Partial Dislocations in SiliconPhysica Status Solidi (b), 1980
- Low-density dislocation arrays at heteroepitaxial Ge/GaAs-interfaces investigated by high voltage electron microscopyApplied Physics B Laser and Optics, 1979
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substratesThin Solid Films, 1977
- Structure of epitaxial crystal interfacesSurface Science, 1972
- Dislocations in Silicon due to Localized DiffusionJournal of Applied Physics, 1966
- Dislocation Mobility in GermaniumPhysical Review B, 1963
- Dislocations in the diamond latticeJournal of Physics and Chemistry of Solids, 1958