Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs
- 2 June 2000
- journal article
- review article
- Published by Elsevier BV in Materials Chemistry and Physics
- Vol. 65 (3), 227-248
- https://doi.org/10.1016/s0254-0584(00)00253-4
Abstract
No abstract availableKeywords
This publication has 131 references indexed in Scilit:
- (Ba,Sr)TiO3thin films: Preparation, properties and reliabilityFerroelectrics, 1999
- Dielectric dispersion in Barium Strontium Titanate thin film capacitors with iridium electrodesIntegrated Ferroelectrics, 1998
- Investigation of bulk and interfacial properties of Ba0.5Sr0.5TiO3 thin film capacitorsApplied Physics Letters, 1998
- Studies on structural and electrical properties of barium strontium titanate thin films developed by metallo-organic decompositionThin Solid Films, 1997
- Dielectric properties of unannealed ECR-sputtered (Ba, Sr) TiO3 films under DC-bias stressesIntegrated Ferroelectrics, 1997
- Memory applications based on ferroelectric and high-permittivity dielectric thin filmsMicroelectronic Engineering, 1995
- Structural and electrical properties of Ba0.5Sr0.5TiO3 thin films with conductive SrRuO3 bottom electrodesApplied Physics Letters, 1995
- Trends in the development of ULSI DRAM capacitorsIntegrated Ferroelectrics, 1994
- Domains in ferroelectric VDF/TrFE copolymer thin films: Investigated by a new optical probe methodIntegrated Ferroelectrics, 1993
- Effects of crystallization on structural and dielectric properties of thin amorphous films of (1−x)BaTiO3-xSrTiO3 (x=0–0.5, 1.0)Journal of Applied Physics, 1993