Imaging of Arsenic Cottrell Atmospheres Around Silicon Defects by Three-Dimensional Atom Probe Tomography
- 7 September 2007
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 317 (5843), 1370-1374
- https://doi.org/10.1126/science.1145428
Abstract
Discrete control of individual dopant or impurity atoms is critical to the electrical characteristics and fabrication of silicon nanodevices. The unavoidable introduction of defects into silicon during the implantation process may prevent the uniform distribution of dopant atoms. Cottrell atmospheres are one such nonuniformity and occur when interstitial atoms interact with dislocations, pinning the dislocation and trapping the interstitial. Atom probe tomography has been used to quantify the location and elemental identity of the atoms proximate to defects in silicon. We found that Cottrell atmospheres of arsenic atoms form around defects after ion implantation and annealing. Furthermore, these atmospheres persist in surrounding dislocation loops even after considerable thermal treatment. If not properly accommodated, these atmospheres create dopant fluctuations that ultimately limit the scalability of silicon devices.Keywords
This publication has 25 references indexed in Scilit:
- Atom Probe Tomography of Electronic MaterialsAnnual Review of Materials Research, 2007
- Minimization of Ga Induced FIB Damage Using Low Energy Clean-upMicroscopy and Microanalysis, 2006
- Characterization of ultralow-energy implants and towards the analysis of three-dimensional dopant distributions using three-dimensional atom-probe tomographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2006
- First Data from a Commercial Local Electrode Atom Probe (LEAP)Microscopy and Microanalysis, 2004
- Imaging individual atoms inside crystals with ADF-STEMUltramicroscopy, 2003
- Dopant mapping for the nanotechnology ageNature Materials, 2003
- Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk SiNature, 2002
- FinFET-a self-aligned double-gate MOSFET scalable to 20 nmIEEE Transactions on Electron Devices, 2000
- Three-Dimensional Atomic-Scale Imaging of Impurity Segregation to Line DefectsScience, 1999
- Field ion microscopy, field ionization and field evaporationProgress in Surface Science, 1974