Electron Transport at Technologically Significant Stepped 4H-SiC/SiO2 Interfaces

Abstract

The impact of interface steps on electron transport in 4H-SiC MOSFETs is investigated. Steps are found to cause a large increase in roughness scattering leading to anisotropy in the low-field mobility. An increase in phonon scattering, due to variations in the channel depth, is also predicted. Monte Carlo transport simulations show that interface steps lead to degradation of the high-field phonon-limited mobility. Results are important considering the technological significance of 4H-SiC in high temperature, high power electronics