Frequency domain lifetime characterization
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (8), 1653-1661
- https://doi.org/10.1109/16.853044
Abstract
—Time-based measurements,are commonly,used for lifetime characterization of semiconductors. We have developed the theory, verified by experiment, of frequency-based lifetime characterization as an alternative to time-based measurements for MOS devices biased in inversion. One consideration during life- time/diffusion length measurements, is whether the near-surface space-charge region or the bulk or quasineutral region is char- acterized. To characterize the near-surface space-charge region of the device, one usually makes room temperature pulsed MOS capacitor or diode leakage current measurements. We show that room-temperature, frequency-domain capacitance, conductance, or resistance measurements characterize the quasineutral bulk, not the space-charge region, in contrast to room-temperature pulsed MOS-C or diode leakage current measurements,which characterize the space-charge region. Index Terms—Capacitance, impurities, MOS capacitors, semi-Keywords
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