Limiting efficiency of crystalline silicon solar cells due to Coulomb‐enhanced Auger recombination
- 19 December 2002
- journal article
- research article
- Published by Wiley in Progress In Photovoltaics
- Vol. 11 (2), 97-104
- https://doi.org/10.1002/pip.464
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- General parameterization of Auger recombination in crystalline siliconJournal of Applied Physics, 2002
- Limiting efficiency of bulk and thin-film silicon solar cells in the presence of surface recombinationProgress In Photovoltaics, 1999
- Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline siliconJournal of Applied Physics, 1997
- Intrinsic upper limits of the carrier lifetime in siliconJournal of Applied Physics, 1994
- Enhancement of band-to-band Auger recombination by electron-hole correlationsPhysical Review Letters, 1990
- Recombination in highly injected siliconIEEE Transactions on Electron Devices, 1987
- Limiting efficiency of silicon solar cellsIEEE Transactions on Electron Devices, 1984
- Limits on the open-circuit voltage and efficiency of silicon solar cells imposed by intrinsic Auger processesIEEE Transactions on Electron Devices, 1984
- Temperature dependence of the radiative recombination coefficient in siliconphysica status solidi (a), 1974
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958