Relativistic band structure and spin-orbit splitting of zinc-blende-type semiconductors
- 15 July 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (3), 1806-1827
- https://doi.org/10.1103/physrevb.38.1806
Abstract
Zinc-blende-type semiconductors differ from their diamondlike counterparts by the absence of inversion symmetry. This produces a number of spin splittings and spin-orbit coupling effects which are absent in the latter. For instance, all states at a general k are split by spin-orbit interaction. Also, bonding and antibonding p-like states are coupled by the same interaction. Many of these effects are calculated here on the basis of the ab initio self-consistent fully relativistic linear-muffin-tin-orbital method. For a better understanding and interpretation of the results, semiempirical parametrized 16×16 k⋅p calculations of several types are performed. Particular emphasis is placed on determining the signs of these splittings in an unambiguous manner. The results are compared with available experimental data of rather diverse origin.Keywords
This publication has 43 references indexed in Scilit:
- Spin relaxation of holes in the split-hole band of InP and GaSbPhysical Review B, 1987
- Spin splitting of the conduction band of InSb along [110]Solid State Communications, 1986
- Terms Linear inin the Band Structure of Zinc-Blende-Type SemiconductorsPhysical Review Letters, 1986
- Electronic structure of ZnTe and CdTe under pressurePhysical Review B, 1986
- Interference of electric-dipole and magnetic-dipole interactions in conduction-electron-spin resonance in InSbPhysical Review B, 1985
- Splitting of the conduction bands of GaAs forSolid State Communications, 1984
- Precession of the Spin Polarization of Photoexcited Conduction Electrons in the Band-Bending Region of GaAs (110)Physical Review Letters, 1984
- Resonant and bound impurity states infrom pressure dependence of Hall effect and resistivity at 77 KPhysical Review B, 1976
- Electroreflectance at a Semiconductor-Electrolyte InterfacePhysical Review B, 1967
- Band structure of gallium arsenide: Spin-orbit splittingPhysics Letters, 1965