Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
- 14 February 2017
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 10 (3)
- https://doi.org/10.7567/apex.10.031002
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output PowerApplied Physics Express, 2013
- Highly‐uniform 260 nm‐band AlGaN‐based deep‐ultraviolet light‐emitting diodes developed by 2‐inch×3 MOVPE systemphysica status solidi (c), 2011
- Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting DiodesJapanese Journal of Applied Physics, 2011
- Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodesPhysica Status Solidi (a), 2011
- Realization of 270 nm band AlGaN based UV‐LEDs on large area AlN templates with high crystalline qualityphysica status solidi (c), 2009
- 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphireApplied Physics Letters, 2007
- An aluminium nitride light-emitting diode with a wavelength of 210 nanometresNature, 2006
- Investigation of optical and electrical properties of Mg-doped p-InxGa1−xN, p-GaN and p-AlyGa1−yN grown by MOCVDJournal of Crystal Growth, 2004
- Thermal ionization energy of Si and Mg in AlGaNJournal of Crystal Growth, 1998
- Violet and Near-UV Light Emission from GaN/Al 0.08Ga 0.92N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1995