Steam thermal SiO2: Preparation and Raman characterization of free-standing films
- 15 October 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (8), 712-714
- https://doi.org/10.1063/1.92024
Abstract
Free‐standing thick films of thermally grown SiO2 have been prepared by pressure steam oxidation of Si at 650–1000 °C. Characterization of these films by Raman spectroscopy reveals no important structural differences from appropriately annealed bulk fused silica, except for the different water content, which is readily determined. We show that no features of the Raman spectra can be associated with growth‐induced structural anisotropy or the structures that give rise to such metal‐oxide‐semiconductor defects as Qss.Keywords
This publication has 10 references indexed in Scilit:
- Thermal equilibration of raman active defects in vitreous silicaJournal of Non-Crystalline Solids, 1980
- Dependence of Interface State Density on Silicon Thermal Oxidation Process VariablesJournal of the Electrochemical Society, 1979
- Defect-controlled carrier transport in amorphous SiO2Philosophical Magazine Part B, 1979
- The Role of Hydrogen in SiO2 Films on SiliconJournal of the Electrochemical Society, 1979
- Water and its relation to broken bond defects in fused silicaThe Journal of Chemical Physics, 1976
- The optical constants of quartz, vitreous silica and neutron-irradiated vitreous silica (I)Journal of Non-Crystalline Solids, 1976
- Hydrides and Hydroxyls in Thin Silicon Dioxide FilmsJournal of the Electrochemical Society, 1971
- Raman spectra of vitreous silica, germania and sodium silicate glassesJournal of Physics and Chemistry of Solids, 1970
- Raman scattering and far infra-red absorption in neutron compacted silicaDiscussions of the Faraday Society, 1970
- The structure of vitreous silicaJournal of Applied Crystallography, 1969