Diffusion of Hot and Cold Electrons in Semiconductor Barriers

Abstract

The electron current in a semiconductor at uniform lattice temperature $T_0$, with a nonuniform electric field distribution (e.g., a barrier layer), consists of terms arising from conduction, diffusion, and thermal diffusion. The first two terms involve the mobility and diffusion coefficient which are functions of the electron temperature $T$ or, more generally, depend on certain averages over the nonequilibrium, field-dependent electron energy distribution function. The third term is due to the electron temperature gradient and is analogous to conventional thermal diffusion of a gas in a temperature gradient. In conventional theory, which neglects electron heating or cooling, the mobility and diffusion coefficient are material constants and thermal diffusion is absent. Contrary to the case of uniform fields, $T$ is not a unique function of the local field; it also depends on the current and can only be determined by a simultaneous solution of the equations for current flow and conservation of energy with boundary conditions for a particular structure. As an example, a one carrier metal-semiconductor contact rectifer has been analyzed in detail including a discussion of the Peltier effect. In the barrier region $T$ is greater than $T_0$ (i.e., hot electrons) for a reverse bias but less than $T_0$ (i.e., cold electrons) for a forward bias. Computer solutions have been obtained for a Schottky barrier and electron scattering due to acoustic phonons only.