Effect of temperature and voltage sweep rate on C ƒ- V characteristics of MIS capacitors
- 31 October 1974
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 17 (10), 1021-1028
- https://doi.org/10.1016/0038-1101(74)90141-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Trapping, emission and generation in MNOS memory devicesSolid-State Electronics, 1974
- Theory of dynamic charge current and capacitance characteristics in MIS systems containing distributed surface trapsSolid-State Electronics, 1973
- Theory of dynamic charge and capacitance characteristics in MIS systems containing discrete surface trapsSolid-State Electronics, 1973
- Non-equilibrium C-V and I-V characteristics of metal-insulator-semiconductor capacitorsSolid-State Electronics, 1969
- Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si StructuresJournal of the Electrochemical Society, 1969
- Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trappingIEEE Transactions on Electron Devices, 1968
- Si-SiO[sub 2] Fast Interface State MeasurementsJournal of the Electrochemical Society, 1968
- Behavior of MOS inversion layers at low temperatureIEEE Transactions on Electron Devices, 1967