Bottom-up approach for carbon nanotube interconnects
Open Access
- 14 April 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (15), 2491-2493
- https://doi.org/10.1063/1.1566791
Abstract
We report a bottom-up approach to integrate multiwalled carbon nanotubes (MWNTs) into multilevel interconnects in silicon integrated-circuit manufacturing. MWNTs are grown vertically from patterned catalyst spots using plasma-enhanced chemical vapor deposition. We demonstrate the capability to grow aligned structures ranging from a single tube to forest-like arrays at desired locations. is deposited to encapsulate each nanotube and the substrate, followed by a mechanical polishing process for planarization. MWNTs retain their integrity and demonstrate electrical properties consistent with their original structure.
Keywords
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