Third-Order Intermodulation Distortion and Gain Compression in GaAs Fet's
- 1 May 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 27 (5), 400-408
- https://doi.org/10.1109/tmtt.1979.1129640
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A Technique for Predicting Large Signal Performance of a GaAs MESFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Intermodulation Distortion Behavior Of GaAs Power FETSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- High-efficiency MESFET linear amplifier operating at 4 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Method for measuring 3rd-order intermodulation distortion in GaAs f.e.t.sElectronics Letters, 1977
- Modelling the 3rd-order intermodulation-distortion properties of a GaAs f.e.t.Electronics Letters, 1977
- Distortion in high-frequency FET amplifiersIEEE Journal of Solid-State Circuits, 1974