High performance organic thin-film transistors with photopatterned gate dielectric

Abstract

The authors have fabricated high performance pentacene organic thin-film transistor (OTFT) using photopatternable poly(4-vinylphenol) gate dielectric on plastic substrate. The dielectric layer was composed of poly(vinylphenol), 1,2,4,5-tetraacetoxymethylbenzene, and 2,4-bis(trichloro methyl)-6-aryl-1,3,5-triazine. The 1,2,4,5-tetraacetoxymethylbenzene is a cross-linking material which is synthesized by a two-step reaction. The gate dielectric was patterned by spin coating and UV exposure. The OTFT with photopatterned gate dielectric exhibited a field-effect mobility of $1.23{\mathrm{cm}}^2∕\mathrm{V}\mathrm{s}$ and a threshold voltage of $-6.5\mathrm{V}$ and an on/off current ratio of ${10}^7$ , so that the OTFT can be applied to make a high performance display.