A 0.5-μm CMOS T/R switch for 900-MHz wireless applications
- 1 March 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 36 (3), 486-492
- https://doi.org/10.1109/4.910487
Abstract
A single-pole double-throw transmit/receive switch for 3.0-V applications has been fabricated in a 0.5-/spl mu/m CMOS process. An analysis shows that substrate resistances and source/drain-to-body capacitances must be lowered to decrease insertion loss. The switch exhibits a 0.7-dB insertion loss, a 17-dBm power 1-dB compression point (P/sub 1 dB/), and a 42-dB isolation at 928 MHz. The low insertion loss is achieved by optimizing the transistor widths and bias voltages, by minimizing the substrate resistances, and by dc biasing the transmit and receive nodes, which decreases the capacitances while increasing the power 1-dB compression point. The switch has adequate insertion loss, isolation, P/sub 1 dB/, and IP/sub 3/ for a number of 900-MHz ISM band applications requiring a moderate peak transmitter power level (/spl sim/15 dBm).Keywords
This publication has 6 references indexed in Scilit:
- A 2.2-V operation, 2.4-GHz single-chip GaAs MMIC transceiver for wireless applicationsIEEE Journal of Solid-State Circuits, 1999
- Linear and nonlinear characteristics of the silicon CMOS monolithic 50-Ω microwave and RF control elementIEEE Journal of Solid-State Circuits, 1999
- Effects of substrate resistances on LNA performance and a bondpad structure for reducing the effects in a silicon bipolar technologyIEEE Journal of Solid-State Circuits, 1999
- High-Q capacitors implemented in a CMOS process for low-power wireless applicationsIEEE Transactions on Microwave Theory and Techniques, 1998
- A GaAs high power RF single-pole dual throw switch IC for digital-mobile communication systemIEEE Journal of Solid-State Circuits, 1995
- A low cost and low power silicon npn bipolar process with NMOS transistors (ADRF) for RF and microwave applicationsIEEE Transactions on Electron Devices, 1995