Electron and hole energy relaxation rates in GaInNAs/GaAs quantum wells via deformation potential and piezoelectric scattering
- 10 September 2012
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 250 (1), 134-146
- https://doi.org/10.1002/pssb.201248040
Abstract
No abstract availableFunding Information
- TUBITAK Ankara (110T377)
- Anadolu University (BAP-1001F99)
This publication has 54 references indexed in Scilit:
- Effect of localized states on internal quantum efficiency of III‐nitride LEDsPhysica Status Solidi (RRL) – Rapid Research Letters, 2010
- Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wellsMicroelectronics Journal, 2009
- Solution of the Boltzmann equation for calculating the Hall mobility in bulkPhysical Review B, 2005
- GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applicationsJournal of Crystal Growth, 2004
- III N V semiconductors for solar photovoltaic applicationsSemiconductor Science and Technology, 2002
- Hot electron energy relaxation via acoustic-phonon emission in GaAs/Ga1 xAlxAs multiple quantum wells: well-width dependenceSemiconductor Science and Technology, 2001
- Hot electron energy relaxation via acoustic phonon emission in modulation-doped heterojunctions with double-subband occupancyPhysical Review B, 2001
- Electronic band structures of GaInNAs/GaAs compressive strained quantum wellsJournal of Applied Physics, 2001
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Hot Electron Shubnikov‐de Haas effect in n‐GaSbPhysica Status Solidi (b), 1971