Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser
- 17 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (3), 221-222
- https://doi.org/10.1063/1.101913
Abstract
Room-temperature continuous wave (cw) operation of a GaAs vertical microcavity surface-emitting laser has been achieved. An ultrashort cavity device with a cavity length of ∼5.5 μm was grown by metalorganic chemical vapor deposition. cw lasing characteristics such as mode properties and temperature characteristics were examined. Single longitudinal mode operation with a side mode suppression ratio of 35 dB was obtained. The temperature range for single mode operation was more than 50 K.This publication has 5 references indexed in Scilit:
- Surface emitting semiconductor lasersIEEE Journal of Quantum Electronics, 1988
- GaAs surface emitting lasers with circular buried heterostructure grown by metalorganic chemical vapor deposition and two-dimensional laser arrayApplied Physics Letters, 1988
- Microcavity GalaAs/GaAs surface-emitting laser with Ith = 6 mAElectronics Letters, 1987
- Growth of thin single crystal NiSi2 films on Si surfaces, a field ion microscope studyApplied Physics Letters, 1985
- Two-dimensional array of GaInAsP/InP surface-emitting lasersElectronics Letters, 1985