Low-cost technique for preparing n-Sb2S3/p-Si heterojunction solar cells

Abstract

The first fabrication of low cost n‐Sb2S3/p‐Si heterojunctionsolar cells by chemical deposition method is reported. It is observed that in the case of n‐Sb2S3films chemically deposited with silicotungstic acid on p‐Si and annealed, the photovoltaicproperties of the n‐Sb2S3/p‐Si junctions are considerably improved. Under AM1 illumination, the improved junction exhibited an efficiency (η) of ∼5.19% on an active area of 0.05 cm2 without any antireflection coating whereas the n‐Sb2S3films deposited without STA on p‐Si showed η=1.03%.