Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices
- 17 April 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 54 (3), 410-417
- https://doi.org/10.1109/ted.2006.890592
Abstract
In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor (HEMT) device is presented. Drain-current dispersion effects are investigated when gate or drain voltages are pulsed. Gate-lag and drain-lag turn-on measurements are analyzed, revealing clear mechanisms of current collapse and related dispersion effects. Numerical 2-D transient simulations considering surface traps effects in a physical HEMT model have also been carried out. A comparison between experimental and theoretical results is shown. The presence of donor-type traps acting as hole traps, due to their low energy level of 0.25 eV relative to the valence band, with densities >1e20 cm-3 (>5e12 cm-2), uniformly distributed at the HEMT surface, and interacting with the free holes that accumulated at the top surface due to piezoelectric fields, accounts for the experimentally observed effects. Time constants next to 10 ms are deduced. Some additional features in the measured transient currents, with faster time constants, could not be associated with surface statesKeywords
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