Epitaxial strained germanium p-MOSFETs with HfO/sub 2/ gate dielectric and TaN gate electrode
- 22 March 2004
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 18.2.1-18.2.4
- https://doi.org/10.1109/iedm.2003.1269315
Abstract
Germanium p-MOSFETs with a thin high-k dielectric (EOT/spl sim/1.6 nm) were fabricated on bulk Ge and epitaxial germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The IV and CV characteristics achieved in this work allow for accurate extraction of important device parameters such as transconductance (Gm) and low-field mobility. Results from n-MOSFETs fabricated on bulk Ge substrates are also presented.Keywords
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