Room temperature ferromagnetism in carbon-implanted ZnO
- 8 December 2008
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 93 (23), 232507
- https://doi.org/10.1063/1.3048076
Abstract
Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [H. Pan et al., Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e., ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.Keywords
This publication has 17 references indexed in Scilit:
- Hidden ferromagnetic secondary phases in cobalt-doped ZnO epitaxial thin filmsPhysical Review B, 2008
- Ferromagnetism and suppression of metallic clusters in Fe implanted ZnO: a phenomenon related to defects?Journal of Physics D: Applied Physics, 2008
- Room temperature ferromagnetism in ZnO films due to defectsApplied Physics Letters, 2008
- Two Magnetic Regimes in Doped ZnO Corresponding to a Dilute Magnetic Semiconductor and a Dilute Magnetic InsulatorPhysical Review Letters, 2008
- Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealingPhysical Review B, 2008
- Magnetism in Ar-implanted ZnOJournal of Physics: Condensed Matter, 2007
- Room temperature ferromagnetism in Mn-doped ZnO films mediated by acceptor defectsApplied Physics Letters, 2007
- Direct Kinetic Correlation of Carriers and Ferromagnetism inPhysical Review Letters, 2006
- Stabilization of Ferromagnetic States by Electron Doping in Fe-, Co- or Ni-Doped ZnOJapanese Journal of Applied Physics, 2001
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000