Phonon-assisted transitions in gallium-phosphide modulation spectra

Abstract
The intrinsic absorption edge of GaP has been investigated by piezomodulation spectroscopy between 1.6 and 300 °K. Structures due to indirect transitions assisted by Languedoc, 34060 Montpellier Cedex, France very well resolved. An analysis of the data gives the binding energy of the indirect exciton at 13 ± 1 meV. The forbidden energy gap decreases from 2.346 eV at 1.6 °K to 2.269 eV at 300 °K.