MOCVD of high-quality YBa2Cu3O7 –δfilms: in situ preparation of fluorine-free layers from a fluorinated barium source
- 1 January 1994
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry
- Vol. 4 (9), 1393-1401
- https://doi.org/10.1039/jm9940401393
Abstract
An MOCVD process is reported that employs the thermally stable barium 1,1,1,5,5,5-hexafluoropentane-2,4-dionate adduct Ba(hfac)2·(18-crown-6). This compound was used in combination with non-fluorinated copper and yttrium sources to deposit superconducting YBa2Cu3O7 –δ films in a computer-controlled MOCVD reactor specially developed for use with solid metal sources requiring vaporisation at 120–200 °C. The characterisation of films grown on MgO and LaAlO3 substrates by X-ray diffraction, electron microscopy, compositional analyses and electrical measurements is described. Optimised films were grown at 690 °C under O2 partial pressures of 0.19 Torr. By depositing in the presence of an excess of water vapour, at a partial pressure of 3.5 Torr, fluorine-free layers were obtained by an in situ method not involving any post-deposition annealing. Results on films grown under other conditions suggest that hydrolysis reactions are extremely important in this deposition process. The YBa2Cu3O7 –δ growth technique employed can produce films with crystallographic and electrical properties similar to the best films grown by any current method. This is illustrated by data on a film on LaAlO3, characterised by the epitaxial relationships YBa2Cu3O7 –δ(001)‖LaAlO3(001) and YBa2 Cu3O7 –δ[100]‖LaAlO3[100], which showed zero resistance at 91.8 K and a critical current density in self-field at 77 K of ca. 1.5 × 106 A cm–2.Keywords
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