Ionization of the Direct-Gap Exciton in Photoexcited Germanium
- 22 August 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 51 (8), 698-701
- https://doi.org/10.1103/physrevlett.51.698
Abstract
The excitonic absorption at the direct gap in Ge is measured as a function of the density and temperature of excitations at the indirect gap. The spectra are analyzed by means of a many-body theory which is valid for arbitrary free-carrier densities. The critical densities for the ionization are determined for temperatures from 8.5 to 60 K and compared with other predictions.Keywords
This publication has 14 references indexed in Scilit:
- Many-Body Theory of Optical Bistability in SemiconductorsPhysical Review Letters, 1982
- Transient Optical Spectra of a Dense Exciton Gas in a Direct-Gap SemiconductorPhysical Review Letters, 1982
- Theory of absorption and refraction of direct-gap semiconductors with arbitrary free-carrier concentrationsZeitschrift für Physik B Condensed Matter, 1982
- Exciton Bose condensation : the ground state of an electron-hole gas - I. Mean field description of a simplified modelJournal de Physique, 1982
- Thermodynamical Properties of the Electron–Hole System outside the Region of Droplet Formation in GermaniumPhysica Status Solidi (b), 1980
- Dynamics of Photoexcited GaAs Band-Edge Absorption with Subpicosecond ResolutionPhysical Review Letters, 1979
- Long Wave Limit of the Complex Dielectric Function for Coulomb System with Bound StatesAnnalen der Physik, 1979
- Mott distortion of the electron-hole fluid phase diagramPhysical Review B, 1978
- Trions, molecules and excitons above the Mott density in GeSolid State Communications, 1977
- Excitons and Electron‐Hole Plasma. A Ground State CalculationPhysica Status Solidi (b), 1976