Deep Level Transient Spectroscopy Depth Profile Measurements of Polycrystalline Zinc Oxide Ceramic
- 1 September 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (9B), L1158
- https://doi.org/10.1143/jjap.35.l1158
Abstract
A method is proposed for performing deep level transient spectroscopy depth profile measurements of defects in polycrystalline ZnO. A multilayer-chip ZnO varistor structure is adopted to minimize the number of grains connected in series. It is verified that the distributions of some defects near the ZnO grain boundary are highly nonuniform. Valuable information has been obtained from the measured defect distribution profiles.Keywords
This publication has 13 references indexed in Scilit:
- Electrical Properties of Multilayer‐Chip ZnO Varistors in a Moist‐Air EnvironmentJournal of the American Ceramic Society, 1994
- Deep Level Transient Spectroscopy of Zinc Oxide Varistors Doped with Aluminum Oxide and/or Silver OxideJournal of the American Ceramic Society, 1994
- Deep-Level Transient Spectroscopy of Interface States in ZnO/PrCoOx/ZnO Thin-Film JunctionsJapanese Journal of Applied Physics, 1992
- Defect clusters in zinc oxideJournal of Applied Physics, 1990
- Extended bulk defects induced by low-energy ions during partially ionized beam depositionJournal of Applied Physics, 1988
- The deep level transient spectroscopy studies of a ZnO varistor as a function of annealingJournal of Applied Physics, 1988
- Characterization of deep levels in zinc oxideJournal of Applied Physics, 1988
- Properties of Deep Levels in ZnO Varistors and Their Effect on Current-Response CharacteristicsJapanese Journal of Applied Physics, 1980
- DLTS Measurement on Non-Ohmic Zinc Oxide Ceramic VaristorJapanese Journal of Applied Physics, 1980
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974