Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing
- 30 June 2011
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 58 (7), 1822-1829
- https://doi.org/10.1109/TED.2011.2135355
Abstract
We have experimentally established that the inverse subthreshold slope S of a Si nanowire tunneling field-effect transistor (NW-TFET) array can be within 9% of the theoretical limit when the doping profile along the channel is properly engineered. In particular, we have demonstrated that combining excimer laser annealing with a low-temperature rapid thermal anneal results in an abrupt doping profile at the source/channel interface as evidenced by the electrical characteristics. Gate-controlled tunneling has been confirmed by evaluating S as a function of temperature. The good agreement between our experimental data and simulation allows performance predictions for more aggressively scaled TFETs. We find that Si NW-TFETs can be indeed expected to deliver S-values below 60 mV/dec for optimized device structures.Keywords
This publication has 34 references indexed in Scilit:
- Gate-all-around silicon nanowire MOSFETs and circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2010
- Correlation of local structure and electrical activation in arsenic ultrashallow junctions in siliconJournal of Applied Physics, 2008
- Tunneling phenomena in carbon nanotube field‐effect transistorsPhysica Status Solidi (a), 2008
- Arsenic Junction Thermal Stability and High-Dose Boron-Pocket Activation During SPER in nMOS TransistorsIEEE Electron Device Letters, 2007
- An EXAFS investigation of arsenic shallow implant activation in silicon after laser sub-melt annealingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006
- Small-Diameter Silicon Nanowire SurfacesScience, 2003
- Arsenic deactivation enhanced diffusion: A time, temperature, and concentration studyJournal of Applied Physics, 1998
- Precipitation, aggregation, and diffusion in heavily arsenic-doped siliconPhysical Review B, 1994
- The effect of low-thermal-budget anneals and furnace ramps on the electrical activation of arsenicJournal of Applied Physics, 1992
- Low-temperature annealing of shallow arsenic-implanted layersJournal of Applied Physics, 1987