Spectroscopic constants and radiative lifetimes for valence-excited bound states in SiO

Abstract

Using the self‐consistent polarization propagator approximation we have calculated the spectroscopic constants for the following bound states in silicon monoxide: a ³Σ⁺, b³Π, d³Δ, e ³Σ^‐, C ¹Σ⁺, D ¹Δ, A ¹Π, E ¹Σ⁺, ³Σ⁺(II), ³Σ⁺(III), ³Π (III), F ¹Σ⁺, H ¹Σ⁺, and G ¹Π. The molecular parameters for the seven lowest states agree very well with experiments, whereas the seven remaining levels were determined less accurately. The electronic transition moments were calculated for the dipole allowed transitions. The calculated radiative lifetime for the A ¹Π state was found to be 49.5 nsec. With the experimental potential energy curves the corresponding lifetime was 31.6 nsec.