Demonstration of solar-blind AlxGa1−xN-based heterojunction phototransistors
- 7 December 2015
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 107 (23), 233501
- https://doi.org/10.1063/1.4937389
Abstract
Al0.4Ga0.6N/Al0.65Ga0.35N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 103 was obtained at 6 V bias.Funding Information
- the National Basic Research Program (973 Program) of China (No.2012CB619302)
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