Schottky energy barrier and charge injection in metal/copper–phthalocyanine/metal structures
- 24 June 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (25), 4840-4842
- https://doi.org/10.1063/1.1483388
Abstract
We present experimental results on current injection from different metal electrodes into copper–phthalocyanine (Cu–Pc). The current–voltage (J–V) characteristics and current injected at the contact are investigated as a function of Schottky energy barrier, thickness of organic semiconductor, and temperature. These results are interpreted using a consistent description of J–V characteristics through the injection limited current in the case of high Schottky energy barriers and space charge limited current in the case of low Schottky energy barrier.Keywords
This publication has 29 references indexed in Scilit:
- Direct observation of structural changes in organic light emitting devices during degradationJournal of Applied Physics, 2001
- High rectification in metal-phthalocyanine based single layer devicesIEEE Transactions on Electron Devices, 2001
- Controlling hole injection in organic electroluminescent device by sputter-grown Cu-phthalocyanine thin filmsApplied Physics Letters, 2001
- Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate InsulatorsScience, 1999
- Schottky energy barriers and charge injection in metal/Alq/metal structuresApplied Physics Letters, 1999
- An organic infrared electroluminescent diode utilizing a phthalocyanine filmIEEE Transactions on Electron Devices, 1997
- Polymer Photovoltaic Cells: Enhanced Efficiencies via a Network of Internal Donor-Acceptor HeterojunctionsScience, 1995
- Organic Transistors: Two-Dimensional Transport and Improved Electrical CharacteristicsScience, 1995
- Carrier tunneling and device characteristics in polymer light-emitting diodesJournal of Applied Physics, 1994
- Light-emitting diodes based on conjugated polymersNature, 1990