Fracture toughness of pure and in-doped GaAs
- 31 December 1988
- journal article
- Published by Elsevier BV in Scripta Metallurgica
- Vol. 22 (7), 1043-1048
- https://doi.org/10.1016/s0036-9748(88)80100-5
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Dislocation velocity measurements in semi-insulating In-doped GaAsPhilosophical Magazine Letters, 1987
- Propagation of {110} cleavage cracks in siliconSurface Science, 1987
- Measurements of the critical resolved shear stress for indium-doped and undoped GaAs single crystalsApplied Physics Letters, 1986
- Dynamic characteristics of dislocations in indium-doped gallium arsenide crystalApplied Physics Letters, 1986
- A Critical Evaluation of Indentation Techniques for Measuring Fracture Toughness: I, Direct Crack MeasurementsJournal of the American Ceramic Society, 1981
- The surface energy of Si, GaAs, and GaPJournal of Applied Physics, 1981
- Observation par topographie aux rayons X des configurations de dislocations développées a l'extrémité d'une fissure dans le siliciumPhilosophical Magazine A, 1980
- The brittle-to-ductile transition in pre-cleaved silicon single crystalsPhilosophical Magazine, 1975
- Third-Order Elastic Moduli of Gallium ArsenideJournal of Applied Physics, 1967
- A CONTINUUM-MECHANICS VIEW OF CRACK PROPAGATIONInternational Materials Reviews, 1965