Temperature Dependent Characteristics of Hydrogenated Amorphous Silicon thin film Transistors
- 1 January 1988
- journal article
- Published by Springer Science and Business Media LLC in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitrideApplied Physics Letters, 1988
- Amorphous silicon logic integrated circuitsApplied Physics A, 1988
- Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogenPhysical Review B, 1987
- a-Si MOS Fet with Native-Oxide Gate Grown by Normal-Pressure and Low-Temperature Thermal-Oxidation MethodMRS Proceedings, 1987
- Metastable Defects in Amorphous-Silicon Thin-Film TransistorsPhysical Review Letters, 1986
- Physics of amorphous silicon based alloy field-effect transistorsJournal of Applied Physics, 1984
- Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistorsApplied Physics Letters, 1983
- The characteristics and properties of optimised amorphous silicon field effect transistorsApplied Physics A, 1983
- Evidence for Exponential Band Tails in Amorphous Silicon HydridePhysical Review Letters, 1981
- Electronic Processes in Non-Crystalline MaterialsPhysics Today, 1972