Noncentrosymmetric chalcohalide NaBa4Ge3S10Cl with large band gap and IR NLO response
- 10 March 2014
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 2 (23), 4590-4596
- https://doi.org/10.1039/c4tc00060a
Abstract
By introducing a highly electronegative halide anion into chalcogenides, a novel chalcohalide, NaBa4Ge3S10Cl, has been synthesized by a conventional high temperature solid state method. It crystallizes in a new structure type of space group P63, with a = 9.7653(2) Å, c = 12.0581(3) Å and Z = 2. The fundamental unit is the unique [Ge3S9] ring, comprised of three GeS4 tetrahedra sharing corner S atoms. The [Ge3S9] rings are arranged to form pseudo layers, which are stacked through Na–Cl–Ba chains to build up the structure. The macroscopic packing of these [Ge3S9] rings provides the material with a moderate nonlinear optical (NLO) response at 2090 nm fundamental light. Furthermore, UV-vis-IR spectroscopy shows that NaBa4Ge3S10Cl has a very large band gap of 3.49 eV, which is very beneficial for increasing the laser damage threshold and avoiding the two-photon absorption problem of conventional near IR laser pumping sources.This publication has 80 references indexed in Scilit:
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