Enhanced Responsivity of Photodetectors Realized via Impact Ionization
Open Access
- 30 January 2012
- Vol. 12 (2), 1280-1287
- https://doi.org/10.3390/s120201280
Abstract
To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.Keywords
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