Atomic layer control of the growth of oxide superconductors using laser molecular beam epitaxy
- 1 March 1993
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 225 (1), 275-279
- https://doi.org/10.1016/0040-6090(93)90169-p
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Atomic Layer Control of SrCuOx and Layer-By-Layer Growth of Bi2Sr2Can-1CunO2n+4 (n=1 to 5) on SrTiO3 (100) by Laser Molecular-Beam-EpitaxyJapanese Journal of Applied Physics, 1992
- Epitaxial Growth and Properties of Ca1-xSrxCuO2 Thin Film (x=0.18 to 1.0) Prepared by Co-Deposition and Atomic Layer StackingJapanese Journal of Applied Physics, 1992
- Crystal structure and superconductivity of (La,Sr)2CuO4/Sm2CuO4 superlattices prepared by excimer laser depositionApplied Physics Letters, 1991
- Atomic layer and unit cell layer growth of (Ca,Sr)CuO2 thin film by laser molecular beam epitaxyApplied Physics Letters, 1991
- New cuprate superconductorsNature, 1991
- Molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O compoundsJournal of Crystal Growth, 1990
- Tailored thin films of a superconducting Bi-Sr-Ca-Cu oxide prepared by incorporation of exotic atoms—control of the distance between CuO2 layersApplied Physics Letters, 1990
- The parent structure of the layered high-temperature superconductorsNature, 1988
- Interlayer effects in high-Tc superconductorsNature, 1988
- Intensity oscillations of reflection high-energy electron diffraction during silicon molecular beam epitaxial growthApplied Physics Letters, 1985