Point defects inαAl2O3:Mgstudied by electrical conductivity, optical absorption, and ESR

Abstract
Total and partial ionic and electronic c-axis dc conductivities were measured for single-crystal Al2 O3:8 ppm Mg as a function of oxygen pressure and temperature. The sample is unsaturated at T>1360 °C but is saturated in equilibrium with a spinel precipitate phase at lower temperatures. The results are analyzed to give ionic mobility, thermodynamic parameters of oxidation reduction of Al2 O3, and the solubility of MgO as a function of temperature. Oxidized samples are grayish purple due to the presence of a broad absorption band with maximum at 480 nm. Discoloration can occur by reduction (at high temperature) or by precipitation (at T<1000 °C); both proceed from the surface, involving migration of oxygen out of or of Al into the crystal. An explanation for the rapid diffusion regulating precipitation below 1000 °C is proposed. Recoloration at low temperature proceeds without a front and possibly involves oxygen diffusing into the sample along dislocations or subgrain boundaries. Hole-release studies at low temperature indicate that the hole binding energy in the defect MgAlx, Ea0.68 eV. The combined results of the present work suggest that free holes move as large, rather than small, polarons and that Ea=0.68 eV.

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