Effect of growth temperature on epitaxial lateral overgrowth of GaAs on Si substrate
- 1 April 1997
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 174 (1-4), 630-634
- https://doi.org/10.1016/s0022-0248(97)00067-5
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1995
- Effect of Si Doping on Epitaxial Lateral Overgrowth of GaAs on GaAs-Coated Si SubstrateJapanese Journal of Applied Physics, 1992
- Epitaxial Lateral Overgrowth of GaAs on a Si SubstrateJapanese Journal of Applied Physics, 1989