Fundamental limitations in microelectronics—I. MOS technology
- 31 July 1972
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 15 (7), 819-829
- https://doi.org/10.1016/0038-1101(72)90103-7
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969
- Silicon diode breakdown in the transition range between avalanche effect and field emissionSolid-State Electronics, 1967
- DIRECT TRANSMISSION ELECTRON MICROSCOPE OBSERVATION OF ELECTROTRANSPORT IN ALUMINUM THIN FILMSApplied Physics Letters, 1967
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967
- Effect of junction curvature on breakdown voltage in semiconductorsSolid-State Electronics, 1966
- Effect of Degenerate Semiconductor Band Structure on Current-Voltage Characteristics of Silicon Tunnel DiodesPhysical Review B, 1963
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Internal Field Emission at Narrow Silicon and GermaniumJunctionsPhysical Review B, 1960
- Breakdown in Silicon pn Junctions†Journal of Electronics and Control, 1959
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957