Prediction of a Resonance-Enhanced Laser-Beam Displacement at Total Internal Reflection in Semiconductors
- 23 May 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 50 (21), 1664-1667
- https://doi.org/10.1103/physrevlett.50.1664
Abstract
Lateral Goos-Hänchen shifts can be increased by factors of 10-100 for laser frequency near an exciton-polariton resonance in semiconductors. A "negative" shift can occur for laser frequency in the pseudogap . Surface irregularities can be probed with this effect.
Keywords
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