Effects of surface roughness and oxide layer on the thermal boundary conductance at aluminum/silicon interfaces

Abstract

In nanosystems, the primary scattering mechanisms occur at the interfaces between the material layers. As such, the structure and composition around these interfaces can affect scattering rates and, therefore, thermal resistances. In this work, we measure the room-temperature thermal boundary conductance of aluminum films grown on silicon substrates subjected to various pre-Al-deposition surface treatments with a pump-probe thermoreflectance technique. The Si surfaces are characterized with atomic force microscopy to determine mean surface roughness. The measured thermal boundary conductances decrease as Si surface roughness increases. In addition, stripping of the native oxide layer from the surface of the Si substrate immediately prior to Al film deposition causes the thermal boundary conductance to increase. The measured data are compared to an extension of the diffuse mismatch model that accounts for interfacial mixing and structure around the interface in order to better elucidate the thermal scattering processes affecting thermal boundary conductance at rough interfaces. DOI: http://dx.doi.org/10.1103/PhysRevB.82.085307 Received 7 June 2010Revised 6 July 2010Published 5 August 2010© 2010 The American Physical Society