Short channel and back-gate coupling effects in silicon-on-nothing (SON) MOSFETs

1 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 122-123
https://doi.org/10.1109/soi.2003.1242923

Abstract

In this paper, we investigate short channel effects (SCE) and coupling behaviour. A detailed analysis of the front and back-gate coupling and an original model of the interface coupling are presented.

Keywords

SILICON
MOSFETS
SEMICONDUCTOR DEVICE MODELING
SEMICONDUCTOR FILMS

This publication has 2 references indexed in Scilit:

The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects
IEEE Electron Device Letters, 1988
Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's
IEEE Transactions on Electron Devices, 1983

Cited by 2 articles