Comment on "Epitaxial BiFeO 3 Multiferroic Thin Film Heterostructures"
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- 25 February 2005
- journal article
- editorial
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 307 (5713), 1203
- https://doi.org/10.1126/science.1105422
Abstract
Like Wang et al. (1), we grew BFO films on 50-nm underlayers of SrRuO3 (SRO) on SrTiO3 (001) substrates (STO). In addition, we used plain STO and conducting 0.2% atomic Nb-doped SrTiO3 substrates (Nb-STO). Both BFO and SRO films were grown by pulsed laser deposition with a KrF excimer laser (248 nm, 1 Hz, target-substrate distance = 8cm). BFO films were grown (670°C, 8 Pa O2, 1.6 J cm–2) using a Bi-rich target of Bi1.2FeO3, because Bi is volatile (6). SRO films were grown (650°C, 9 Pa O2, 1.7 J cm–2) using a stoichiometric target. The growth rate for both BFO and SRO was 10 Å/min. After deposition, films were cooled at 5°C/min to 400°C in 40 kPa oxygen, annealed for 1 hour, and then cooled to room temperature at 8°C/min.Keywords
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