Photoluminescence properties of ZnO epilayers grown on CaF2(111) by plasma assisted molecular beam epitaxy
- 27 March 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (14), 1905-1907
- https://doi.org/10.1063/1.126207
Abstract
Photoluminescence (PL) properties of ZnO films grown on with a low-temperature buffer layer by plasma assisted molecular beam epitaxy are investigated, in which lattice misfit tensile strain is expected to be compensated by the thermal compressive strain. The low-temperature buffer layer is further introduced to accommodate lattice strain leading to the growth of almost strain-free and high quality ZnO films. PL spectra of ZnO layers measured at 10 K are dominated by neutral-donor bound exciton emission at 3.366 eV with a linewidth of 12 meV. Commonly observed deep level emission at around 2.3 eV is negligibly small in intensity. Free exciton emission develops as temperature is raised and eventually dominates at temperatures higher than 70 K. Detailed study on temperature-dependent PL spectra indicates that the energy position of the free exciton emission is located at the same energy as bulk materials suggesting the growth of strain-free ZnO layers. Consequently, stimulated emission due to exciton–exciton scattering is observed at 77 K.
Keywords
This publication has 23 references indexed in Scilit:
- Effects of a low-temperature buffer layer on structural properties of ZnO epilayers grown on (111)CaF2 by two-step MBEJournal of Crystal Growth, 2000
- Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterizationJournal of Applied Physics, 1998
- Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBEJournal of Crystal Growth, 1998
- Picosecond Energy Transfer between Excitons and Defects in II-IV SemiconductorsMaterials Science Forum, 1992
- Acceptor-exciton complexes in ZnO: A comprehensive analysis of their electronic states by high-resolution magnetooptics and excitation spectroscopyPhysical Review B, 1988
- Exciton Interaction in Photoluminescence from ZnOPhysica Status Solidi (b), 1974
- Interband Magnetoreflection of ZnOPhysica Status Solidi (b), 1973
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967
- Photoluminescence of Defect-Exciton Complexes in II-VI CompoundsPhysical Review Letters, 1965
- The Origin of the Fluorescence in Self-Activated ZnS, CdS, and ZnOThe Journal of Chemical Physics, 1954