Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2
- 6 February 2013
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 25 (18), 2562-2566
- https://doi.org/10.1002/adma.201204718
Abstract
ZnSnN2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna21 crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.Keywords
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