Quantum Hall effect devices as circuit elements

Abstract
The electrical behaviour of a quantum Hall effect device is described in terms of an equivalent circuit. This circuit is able to model the principal electrical characteristics of an ungated Hall bridge device. The effects of electrical loading of the Hall terminals and some anomalous effects related to contact resistances are investigated experimentally using a GaAs/AlGaAs modulation-doped device and are described in terms of the equivalent circuit.

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